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TIP117 TIN/LEAD

Central Semiconductor Corp
TIP117 TIN/LEAD Preview
Central Semiconductor Corp
TRANS PNP DARL 100V TO220-3
$0.73
Available to order
Reference Price (USD)
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$0.72504
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$0.7177896
1000+
$0.7105392
1500+
$0.7032888
2000+
$0.6960384
2500+
$0.688788
Exquisite packaging
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Central Semiconductor Corp TIP117 TIN/LEAD is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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TIP117 TIN/LEAD

TIP117 TIN/LEAD

$0.73

Product details

The TIP117 TIN/LEAD by Central Semiconductor Corp sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The TIP117 TIN/LEAD commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. Central Semiconductor Corp's commitment to innovation is evident in the TIP117 TIN/LEAD's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.

General specs

  • Product Status: Active
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
  • Power - Max: -
  • Frequency - Transition: 25MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3

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