CDM22010-650 SL
Central Semiconductor Corp
Central Semiconductor Corp
MOSFET N-CH 650V 10A TO220
$2.21
Available to order
Reference Price (USD)
1+
$2.11000
50+
$1.70000
100+
$1.53000
500+
$1.19000
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CDM22010-650 SL
$2.21
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 1168 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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