Shopping cart

Subtotal: $0.00

NE85618-T1-A

CEL
NE85618-T1-A Preview
CEL
RF TRANS NPN 12V 6.5GHZ SOT343
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

CEL NE85618-T1-A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NE85618-T1-A

NE85618-T1-A

$0.00

Product details

Optimize your RF circuits with the NE85618-T1-A BJT transistor from CEL, a premium solution in the discrete semiconductor products market. This RF bipolar transistor delivers exceptional linearity and low intermodulation distortion, crucial for high-fidelity signal processing. Its advanced architecture ensures minimal phase noise, making it perfect for precision applications. The device features enhanced thermal management properties and electromagnetic shielding for reliable operation in harsh environments. With its compact form factor, the NE85618-T1-A saves valuable board space without compromising performance. Typical implementations include cellular infrastructure equipment where consistent signal amplification is vital. Industrial automation systems benefit from its robustness in motor control and sensor interfaces. For military applications, it provides secure communication links in encrypted transmission systems. The transistor also excels in scientific instrumentation requiring accurate signal measurement. Engineers appreciate its design flexibility for both narrowband and broadband configurations. CEL backs this product with rigorous quality testing and long-term reliability assurance. Whether you're upgrading existing equipment or developing next-gen RF solutions, the NE85618-T1-A offers the performance edge you need. Visit our website to compare technical specifications or request a sample for evaluation. Let our experts guide you to the ideal transistor solution submit your project requirements now for a customized quotation.

General specs

  • Product Status: Obsolete
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343

Viewed products

Infineon Technologies

BFP420E6327BTSA1

$0.00 (not set)
onsemi

MPSH10_D75Z

$0.00 (not set)
CEL

NE97833-A

$0.00 (not set)
Diodes Incorporated

FMMT5179TA

$0.00 (not set)
NXP USA Inc.

BFG403W,115

$0.00 (not set)
NXP USA Inc.

BFQ149,115

$0.00 (not set)
CEL

2SC5013-A

$0.00 (not set)
NXP USA Inc.

BFG520,235

$0.00 (not set)
Microsemi Corporation

MRF8372GR1

$0.00 (not set)
onsemi

BF959G

$0.00 (not set)
Top