KPDA100P-H8-B
CEL
CEL
SI APD AVALANCHE PHOTODIODE 1000
$136.03
Available to order
Reference Price (USD)
1+
$136.03000
500+
$134.6697
1000+
$133.3094
1500+
$131.9491
2000+
$130.5888
2500+
$129.2285
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
CEL KPDA100P-H8-B is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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KPDA100P-H8-B
$136.03
Product details
Experience unparalleled optical sensing performance with the KPDA100P-H8-B photodiode from CEL, designed for accuracy-driven applications across multiple industries. This premium-grade component offers exceptional light detection capabilities with its optimized semiconductor structure and precision manufacturing. The KPDA100P-H8-B features: wide spectral bandwidth coverage, ultra-fast response times, and outstanding signal-to-noise characteristics. Its advanced design ensures minimal measurement drift over time and temperature variations, providing reliable data in critical applications. The photodiode excels in implementation scenarios including: 1) Optical sorting in recycling facilities 2) Laser power monitoring in material processing 3) Colorimetric analysis in food quality control. CEL has engineered the KPDA100P-H8-B with industry-standard packaging for easy system integration while maintaining precise optical alignment. Each unit undergoes comprehensive performance verification to guarantee compliance with published specifications. For OEMs and system integrators, we offer volume pricing options and customized technical support to streamline your product development process. Contact our sales team through our website's inquiry system to discuss how the KPDA100P-H8-B can meet your specific optical sensing requirements and to request detailed product documentation.
General specs
- Product Status: Active
- Wavelength: 780nm
- Color - Enhanced: -
- Spectral Range: 400nm ~ 1000nm
- Diode Type: Avalanche
- Responsivity @ nm: 0.45 A/W @ 850nm
- Response Time: -
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Dark (Typ): 30pA
- Active Area: 1mm Dia
- Viewing Angle: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
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