MAT01GH
Analog Devices Inc.
Analog Devices Inc.
TRANS 2NPN 45V 0.025A TO78-6
$17.89
Available to order
Reference Price (USD)
1+
$21.11000
10+
$19.47200
25+
$18.59680
100+
$16.62760
250+
$15.86184
Exquisite packaging
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MAT01GH
$17.89
Product details
The MAT01GH from Analog Devices Inc. redefines performance in the Bipolar Junction Transistor (BJT) Arrays category of Discrete Semiconductor Products. This innovative component integrates multiple transistors with precisely matched characteristics for coordinated circuit operation. Engineered for excellence, it offers superior current handling and thermal performance. The MAT01GH features minimal parameter spread across all transistors in the array. Its advanced construction ensures reliable operation in high-frequency applications. The product demonstrates excellent stability over extended operational periods. With its low saturation voltage characteristics, it enhances overall system efficiency. The MAT01GH is particularly suited for applications requiring multiple synchronized switching elements. Power management systems benefit from its precise current regulation capabilities. Signal processing equipment utilizes its matched characteristics for balanced amplification. Renewable energy inverters employ it for efficient power conversion. The MAT01GH also plays vital roles in advanced communication systems. Analog Devices Inc. has incorporated cutting-edge semiconductor technology in its production. The component's design supports both through-hole and surface-mount assembly processes. It complies with international standards for quality and environmental safety. Engineers appreciate its consistent performance across temperature variations. The MAT01GH represents an optimal solution for demanding electronic applications. Learn more about its specifications and availability by contacting our sales team through our website.
General specs
- Product Status: Active
- Transistor Type: 2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max): 25mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 500mW
- Frequency - Transition: 450MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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