CLF1G0060-10
Ampleon USA Inc.
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
$85.34
Available to order
Reference Price (USD)
1+
$85.34000
500+
$84.4866
1000+
$83.6332
1500+
$82.7798
2000+
$81.9264
2500+
$81.073
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Product details
Maximize your RF capabilities with the CLF1G0060-10 RF MOSFET transistor from Ampleon USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The CLF1G0060-10 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The CLF1G0060-10 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The CLF1G0060-10 ensures consistent operation across a wide frequency range. Ampleon USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the CLF1G0060-10 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the CLF1G0060-10 from Ampleon USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 6GHz
- Gain: 16dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 50 mA
- Power - Output: 10W
- Voltage - Rated: 150 V
- Package / Case: SOT-1227B
- Supplier Device Package: SOT1227B