BLS7G3135L-350P,11
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 10DB SOT539A
$825.00
Available to order
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$834.37000
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BLS7G3135L-350P,11
$825.00
Product details
Upgrade your RF systems with the BLS7G3135L-350P,11 RF MOSFET transistor from Ampleon USA Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The BLS7G3135L-350P,11 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the BLS7G3135L-350P,11 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The BLS7G3135L-350P,11 ensures accurate and stable signal processing in all scenarios. Ampleon USA Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the BLS7G3135L-350P,11 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the BLS7G3135L-350P,11 from Ampleon USA Inc. for superior RF performance.
General specs
- Product Status: Not For New Designs
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 3.5GHz
- Gain: 10dB
- Voltage - Test: 32 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 320W
- Voltage - Rated: 65 V
- Package / Case: SOT-539A
- Supplier Device Package: SOT539A
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