BLS7G2729LS-350P,1
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 13DB SOT539B
$688.50
Available to order
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$758.51000
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BLS7G2729LS-350P,1
$688.50
Product details
The BLS7G2729LS-350P,1 by Ampleon USA Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The BLS7G2729LS-350P,1 excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the BLS7G2729LS-350P,1 perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The BLS7G2729LS-350P,1 delivers precise and stable signal processing across all applications. Ampleon USA Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the BLS7G2729LS-350P,1 is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the BLS7G2729LS-350P,1 from Ampleon USA Inc. for unmatched RF quality.
General specs
- Product Status: Not For New Designs
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.7GHz ~ 2.9GHz
- Gain: 13dB
- Voltage - Test: 32 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 350W
- Voltage - Rated: 65 V
- Package / Case: SOT-539B
- Supplier Device Package: SOT539B
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