BLP15M9S100GZ
Ampleon USA Inc.
Ampleon USA Inc.
BLP15M9S100G/SOT1483/REELDP
$21.15
Available to order
Reference Price (USD)
1+
$21.15000
500+
$20.9385
1000+
$20.727
1500+
$20.5155
2000+
$20.304
2500+
$20.0925
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BLP15M9S100GZ
$21.15
Product details
The BLP15M9S100GZ by Ampleon USA Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The BLP15M9S100GZ excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the BLP15M9S100GZ perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The BLP15M9S100GZ delivers precise and stable signal processing across all applications. Ampleon USA Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the BLP15M9S100GZ is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the BLP15M9S100GZ from Ampleon USA Inc. for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.4GHz
- Gain: 18dB
- Voltage - Test: 32 V
- Current Rating (Amps): 1.4µA
- Noise Figure: -
- Current - Test: 900 mA
- Power - Output: 100W
- Voltage - Rated: 65 V
- Package / Case: SOT-1483-1
- Supplier Device Package: SOT1483-1
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