BLP15H9S10GZ
Ampleon USA Inc.
Ampleon USA Inc.
BLP15H9S10G/SOT1483/REELDP
$20.10
Available to order
Reference Price (USD)
1+
$20.10000
500+
$19.899
1000+
$19.698
1500+
$19.497
2000+
$19.296
2500+
$19.095
Exquisite packaging
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BLP15H9S10GZ
$20.10
Product details
Maximize your RF capabilities with the BLP15H9S10GZ RF MOSFET transistor from Ampleon USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The BLP15H9S10GZ handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The BLP15H9S10GZ is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The BLP15H9S10GZ ensures consistent operation across a wide frequency range. Ampleon USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the BLP15H9S10GZ is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the BLP15H9S10GZ from Ampleon USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.4GHz
- Gain: 22dB
- Voltage - Test: 50 V
- Current Rating (Amps): 1.4µA
- Noise Figure: -
- Current - Test: 60 mA
- Power - Output: 10W
- Voltage - Rated: 104 V
- Package / Case: SOT-1483-1
- Supplier Device Package: SOT1483-1
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