BLP05H6350XRY
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 135V 27DB SOT12232
$55.37
Available to order
Reference Price (USD)
100+
$60.77660
Exquisite packaging
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BLP05H6350XRY
$55.37
Product details
Maximize your RF capabilities with the BLP05H6350XRY RF MOSFET transistor from Ampleon USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The BLP05H6350XRY handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The BLP05H6350XRY is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The BLP05H6350XRY ensures consistent operation across a wide frequency range. Ampleon USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the BLP05H6350XRY is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the BLP05H6350XRY from Ampleon USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 108MHz
- Gain: 27dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 350W
- Voltage - Rated: 135 V
- Package / Case: SOT-1223-2
- Supplier Device Package: 4-HSOPF
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