BLM7G22S-60PBY
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 31.5DB SOT12121
$50.25
Available to order
Reference Price (USD)
100+
$44.10000
Exquisite packaging
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BLM7G22S-60PBY
$50.25
Product details
The BLM7G22S-60PBY from Ampleon USA Inc. is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The BLM7G22S-60PBY excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the BLM7G22S-60PBY perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The BLM7G22S-60PBY offers reliable and accurate signal processing in all applications. Ampleon USA Inc. has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the BLM7G22S-60PBY is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the BLM7G22S-60PBY from Ampleon USA Inc. for exceptional RF solutions.
General specs
- Product Status: Last Time Buy
- Transistor Type: LDMOS (Dual)
- Frequency: 2.14GHz
- Gain: 31.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 75 mA
- Power - Output: 1.6W
- Voltage - Rated: 65 V
- Package / Case: SOT-1211-2
- Supplier Device Package: 16-HSOPF
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