BLM7G1822S-80ABY
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 31DB SOT12111
$50.25
Available to order
Reference Price (USD)
100+
$44.10000
Exquisite packaging
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BLM7G1822S-80ABY
$50.25
Product details
The BLM7G1822S-80ABY by Ampleon USA Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The BLM7G1822S-80ABY excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the BLM7G1822S-80ABY perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The BLM7G1822S-80ABY delivers precise and stable signal processing across all applications. Ampleon USA Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the BLM7G1822S-80ABY is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the BLM7G1822S-80ABY from Ampleon USA Inc. for unmatched RF quality.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.17GHz
- Gain: 31dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 4W
- Voltage - Rated: 65 V
- Package / Case: SOT-1211-2
- Supplier Device Package: 16-HSOPF
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