BLL6H1214P2S-250Z
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 50V 27DB MODULE
$525.00
Available to order
Reference Price (USD)
6+
$975.25333
Exquisite packaging
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BLL6H1214P2S-250Z
$525.00
Product details
The BLL6H1214P2S-250Z from Ampleon USA Inc. is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The BLL6H1214P2S-250Z excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the BLL6H1214P2S-250Z perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The BLL6H1214P2S-250Z offers reliable and accurate signal processing in all applications. Ampleon USA Inc. has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the BLL6H1214P2S-250Z is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the BLL6H1214P2S-250Z from Ampleon USA Inc. for exceptional RF solutions.
General specs
- Product Status: Not For New Designs
- Transistor Type: LDMOS (Dual)
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 27dB
- Voltage - Test: 45 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 53dBm
- Voltage - Rated: 50 V
- Package / Case: Module
- Supplier Device Package: Module
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