BLF6G10LS-200RN,11
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
$88.59
Available to order
Reference Price (USD)
100+
$86.82040
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Ampleon USA Inc. BLF6G10LS-200RN,11 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BLF6G10LS-200RN,11
$88.59
Product details
The BLF6G10LS-200RN,11 from Ampleon USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency (RF) amplification, offering superior signal clarity and efficiency. Ideal for both low-noise and high-power scenarios, it ensures reliable performance in critical circuits. With its advanced FET technology, the BLF6G10LS-200RN,11 delivers exceptional gain and stability, making it a top choice for RF designs. Its robust construction guarantees durability even in harsh operating conditions. The BLF6G10LS-200RN,11 is engineered to minimize power loss while maximizing output, ensuring optimal energy utilization. Whether for commercial or industrial use, this MOSFET transistor stands out for its precision and reliability. Its compact design allows for easy integration into various circuit layouts. The BLF6G10LS-200RN,11 is a versatile solution for modern electronic systems requiring high-frequency operation. Trust Ampleon USA Inc. for cutting-edge semiconductor technology that meets the highest standards. Key features include low distortion, high linearity, and excellent thermal management. These attributes make the BLF6G10LS-200RN,11 suitable for a wide range of RF applications. Common uses include wireless communication systems, radar equipment, and broadcast transmitters. It is also ideal for medical devices, automotive electronics, and industrial automation systems. The BLF6G10LS-200RN,11 ensures consistent performance across all these applications. For engineers seeking a dependable RF MOSFET, the BLF6G10LS-200RN,11 is an outstanding option. Ready to enhance your RF designs with this high-quality transistor? Contact us today for pricing and availability. Submit your inquiry online to get started with the BLF6G10LS-200RN,11 from Ampleon USA Inc..
General specs
- Product Status: Last Time Buy
- Transistor Type: LDMOS
- Frequency: 871.5MHz ~ 891.5MHz
- Gain: 20dB
- Voltage - Test: 28 V
- Current Rating (Amps): 49A
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 40W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
Viewed products
