BLC10G22XS-602AVTZ
Ampleon USA Inc.
Ampleon USA Inc.
BLC10G22XS-602AVT/SOT1258/TRAYDP
$93.78
Available to order
Reference Price (USD)
1+
$93.78000
500+
$92.8422
1000+
$91.9044
1500+
$90.9666
2000+
$90.0288
2500+
$89.091
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BLC10G22XS-602AVTZ
$93.78
Product details
The BLC10G22XS-602AVTZ by Ampleon USA Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The BLC10G22XS-602AVTZ excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the BLC10G22XS-602AVTZ perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The BLC10G22XS-602AVTZ delivers precise and stable signal processing across all applications. Ampleon USA Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the BLC10G22XS-602AVTZ is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the BLC10G22XS-602AVTZ from Ampleon USA Inc. for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 15.4dB
- Voltage - Test: 30 V
- Current Rating (Amps): 2.8µA
- Noise Figure: -
- Current - Test: 1.2 A
- Power - Output: 600W
- Voltage - Rated: 65 V
- Package / Case: SOT-1258-4
- Supplier Device Package: SOT1258-4
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