BLC10G18XS-551AVTZ
Ampleon USA Inc.
Ampleon USA Inc.
BLC10G18XS-551AVT/SOT1258/TRAYDP
$86.10
Available to order
Reference Price (USD)
1+
$111.84000
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$106.06950
100+
$95.96750
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BLC10G18XS-551AVTZ
$86.10
Product details
Maximize your RF capabilities with the BLC10G18XS-551AVTZ RF MOSFET transistor from Ampleon USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The BLC10G18XS-551AVTZ handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The BLC10G18XS-551AVTZ is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The BLC10G18XS-551AVTZ ensures consistent operation across a wide frequency range. Ampleon USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the BLC10G18XS-551AVTZ is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the BLC10G18XS-551AVTZ from Ampleon USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 16.1dB
- Voltage - Test: 32 V
- Current Rating (Amps): 2.8µA
- Noise Figure: -
- Current - Test: 750 mA
- Power - Output: 550W
- Voltage - Rated: 65 V
- Package / Case: SOT-1258-4
- Supplier Device Package: SOT1258-4
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