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AS4C64M8D1-5TCN

Alliance Memory, Inc.
AS4C64M8D1-5TCN Preview
Alliance Memory, Inc.
IC DRAM 512MBIT PAR 66TSOP II
$3.90
Available to order
Reference Price (USD)
108+
$2.87028
324+
$2.85957
540+
$2.75426
1,080+
$2.61859
Exquisite packaging
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Alliance Memory, Inc. AS4C64M8D1-5TCN is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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AS4C64M8D1-5TCN

AS4C64M8D1-5TCN

$3.90

Product details

The AS4C64M8D1-5TCN memory IC by Alliance Memory, Inc. delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications. Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The AS4C64M8D1-5TCN offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance. Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The AS4C64M8D1-5TCN is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis. To learn more about implementing this Alliance Memory, Inc. memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the AS4C64M8D1-5TCN memory solution.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700 ps
  • Voltage - Supply: 2.3V ~ 2.7V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP II

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