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AS4C64M8D1-5BIN

Alliance Memory, Inc.
AS4C64M8D1-5BIN Preview
Alliance Memory, Inc.
IC DRAM 512MBIT PARALLEL 60FBGA
$5.95
Available to order
Reference Price (USD)
240+
$3.88333
480+
$3.86883
720+
$3.72635
1,200+
$3.54281
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Alliance Memory, Inc. AS4C64M8D1-5BIN is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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AS4C64M8D1-5BIN

AS4C64M8D1-5BIN

$5.95

Product details

Alliance Memory, Inc.'s AS4C64M8D1-5BIN represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability. Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The AS4C64M8D1-5BIN supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications. The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The AS4C64M8D1-5BIN serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions. Explore the capabilities of this Alliance Memory, Inc. memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the AS4C64M8D1-5BIN to support your project development cycle.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700 ps
  • Voltage - Supply: 2.3V ~ 2.7V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x13)

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