AS4C4M16D1A-5TIN
Alliance Memory, Inc.
Alliance Memory, Inc.
IC DRAM 64MBIT PAR 66TSOP II
$2.90
Available to order
Reference Price (USD)
108+
$2.09407
324+
$2.02608
540+
$2.01852
1,080+
$1.87992
5,076+
$1.70100
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Alliance Memory, Inc. AS4C4M16D1A-5TIN is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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AS4C4M16D1A-5TIN
$2.90
Product details
Alliance Memory, Inc.'s AS4C4M16D1A-5TIN memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply.
The AS4C4M16D1A-5TIN features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs.
Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The AS4C4M16D1A-5TIN is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment.
Discover the full potential of this Alliance Memory, Inc. memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the AS4C4M16D1A-5TIN to meet your project timeline and budget requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700 ps
- Voltage - Supply: 2.3V ~ 2.7V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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