AS4C32M32MD1A-5BIN
Alliance Memory, Inc.

Alliance Memory, Inc.
IC DRAM 1GBIT PARALLEL 90FBGA
$9.24
Available to order
Reference Price (USD)
1+
$7.12000
10+
$6.55100
25+
$6.41480
50+
$6.39200
240+
$5.73425
480+
$5.56038
720+
$5.28822
1,200+
$5.10300
Exquisite packaging
Discount
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TNT | 2-6 days |
EMS | 3-7 days |
Alliance Memory, Inc. AS4C32M32MD1A-5BIN is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Alliance Memory, Inc.'s AS4C32M32MD1A-5BIN represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability.
Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The AS4C32M32MD1A-5BIN supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications.
The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The AS4C32M32MD1A-5BIN serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions.
Explore the capabilities of this Alliance Memory, Inc. memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the AS4C32M32MD1A-5BIN to support your project development cycle.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 1Gb (32M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-FBGA (8x13)