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AS4C2M32S-7BCNTR

Alliance Memory, Inc.
AS4C2M32S-7BCNTR Preview
Alliance Memory, Inc.
IC DRAM 64MBIT PARALLEL 90TFBGA
$3.11
Available to order
Reference Price (USD)
2,000+
$2.28690
4,000+
$2.12625
Exquisite packaging
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Alliance Memory, Inc. AS4C2M32S-7BCNTR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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AS4C2M32S-7BCNTR

AS4C2M32S-7BCNTR

$3.11

Product details

The AS4C2M32S-7BCNTR by Alliance Memory, Inc. represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers. Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The AS4C2M32S-7BCNTR demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades. This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The AS4C2M32S-7BCNTR also serves well in advanced medical imaging equipment and scientific instrumentation. To explore how this Alliance Memory, Inc. memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the AS4C2M32S-7BCNTR memory solution.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: 2ns
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)

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