AS4C16M32MSA-6BINTR
Alliance Memory, Inc.
Alliance Memory, Inc.
IC DRAM 512MBIT PARALLEL 90FBGA
$6.01
Available to order
Reference Price (USD)
1,000+
$4.39425
2,000+
$4.25250
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Alliance Memory, Inc. AS4C16M32MSA-6BINTR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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AS4C16M32MSA-6BINTR
$6.01
Product details
The AS4C16M32MSA-6BINTR memory IC by Alliance Memory, Inc. delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications.
Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The AS4C16M32MSA-6BINTR offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance.
Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The AS4C16M32MSA-6BINTR is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis.
To learn more about implementing this Alliance Memory, Inc. memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the AS4C16M32MSA-6BINTR memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile SDRAM
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-FBGA (8x13)
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