AS4C16M16SA-6BIN
Alliance Memory, Inc.
Alliance Memory, Inc.
IC DRAM 256MBIT PARALLEL 54TFBGA
$6.29
Available to order
Reference Price (USD)
1+
$5.24000
10+
$4.77900
25+
$4.68840
50+
$4.65620
100+
$4.17690
348+
$4.16083
696+
$3.90112
1,044+
$3.73511
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Alliance Memory, Inc. AS4C16M16SA-6BIN is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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AS4C16M16SA-6BIN
$6.29
Product details
Alliance Memory, Inc.'s AS4C16M16SA-6BIN represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability.
Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The AS4C16M16SA-6BIN supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications.
The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The AS4C16M16SA-6BIN serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions.
Explore the capabilities of this Alliance Memory, Inc. memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the AS4C16M16SA-6BIN to support your project development cycle.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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