SemiQ Introduces Advanced 1200V SiC MOSFET Modules with Ultra-Fast Switching and High Thermal Performance

SemiQ has unveiled a new family of co-packaged 1200V SOT-227 MOSFET modules, leveraging its latest third-generation silicon carbide (SiC) technology. These next-generation devices feature smaller die sizes and are engineered to deliver significantly faster switching speeds and lower conduction and switching losses, enhancing overall efficiency in high-performance power applications.

The new lineup of robust and easy-to-mount modules currently includes six core devices—GCMS008C120S1-E1, GCMX008C120S1-E1, GCMS016C120S1-E1, GCMX016C120S1-E1, GCMS040C120S1-E1, and GCMX040C120S1-E1—with an RDS(on) spectrum ranging from 8.4 mΩ to 39 mΩ. Notably, the GCMX040C120S1-E1 module achieves an impressive switching time of just 67 nanoseconds. In addition, SemiQ has released two more modules—GCMS080C120S1-E1 and GCMX080C120S1-E1—each with an RDS(on) of 80 mΩ, rounding out a comprehensive family designed for demanding power environments.

These co-packaged MOSFETs incorporate a Schottky barrier diode, delivering superior switching loss performance even under high junction temperature conditions, thanks to minimal turn-on energy loss. The new modules are purpose-built for applications such as solar inverters, energy storage systems, EV battery chargers, and high-efficiency server power supplies. To ensure reliability, each device undergoes stringent wafer-level gate-oxide burn-in screening and voltage tests that exceed 1400V, along with avalanche robustness ratings reaching 330 mJ (RDS(on) = 39 mΩ) and up to 800 mJ (RDS(on) = 16.5 or 8.4 mΩ).

Operating at a drain-to-source voltage (VDS) of 1200V, these SiC MOSFET modules minimize total switching losses down to 468 µJ and feature a reverse recovery charge as low as 172 nC, as demonstrated by the GCMX040C120S1-E1. Designed with high thermal performance in mind, the modules exhibit low junction-to-case thermal resistance and include an isolated backplate for direct heatsink mounting, validated through 4kVAC galvanic isolation testing.

The QSiC 1200V MOSFET series supports a continuous operating and storage temperature range from -55°C to 175°C. It is optimized for a gate-source operational voltage of -4.5V to +18V, with absolute maximum ratings of -8V to +22V, and power dissipation capacities ranging from 183W to 536W (depending on the RDS(on) value and thermal conditions at 25°C).

On the electrical performance front, the modules achieve a typical junction-to-case thermal resistance of 0.23°C/W (RDS(on) = 8.4 mΩ), a zero-gate voltage drain current of just 100 nA, and a gate-source leakage current of 10 nA. Among the fastest switching variants, users will find turn-on delay times as short as 13 ns, rise times of 7 ns, turn-off delays of 18 ns, and fall times down to 29 ns—making these devices ideal for high-speed, high-efficiency systems.