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W988D2FBJX7E TR

Winbond Electronics
W988D2FBJX7E TR Preview
Winbond Electronics
IC DRAM 256MBIT PARALLEL 90VFBGA
$3.14
Available to order
Reference Price (USD)
2,500+
$2.44150
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Winbond Electronics W988D2FBJX7E TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W988D2FBJX7E TR

W988D2FBJX7E TR

$3.14

Product details

Winbond Electronics's W988D2FBJX7E TR represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability. Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The W988D2FBJX7E TR supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications. The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The W988D2FBJX7E TR serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions. Explore the capabilities of this Winbond Electronics memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the W988D2FBJX7E TR to support your project development cycle.

General specs

  • Product Status: Last Time Buy
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-VFBGA (8x13)

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