W66BL6NBUAFJ
Winbond Electronics
Winbond Electronics
2GB LPDDR4, X16, 1600MHZ, -40C~1
$6.21
Available to order
Reference Price (USD)
1+
$6.20910
500+
$6.147009
1000+
$6.084918
1500+
$6.022827
2000+
$5.960736
2500+
$5.898645
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Winbond Electronics W66BL6NBUAFJ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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W66BL6NBUAFJ
$6.21
Product details
Winbond Electronics's W66BL6NBUAFJ memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply.
The W66BL6NBUAFJ features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs.
Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The W66BL6NBUAFJ is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment.
Discover the full potential of this Winbond Electronics memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the W66BL6NBUAFJ to meet your project timeline and budget requirements.
General specs
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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