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RN2303(TE85L,F)

Toshiba Semiconductor and Storage
RN2303(TE85L,F) Preview
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A USM
$0.27
Available to order
Reference Price (USD)
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$0.30000
10+
$0.27000
25+
$0.19480
100+
$0.15140
250+
$0.09516
500+
$0.08112
1,000+
$0.05516
Exquisite packaging
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RN2303(TE85L,F)

RN2303(TE85L,F)

$0.27

Product details

The RN2303(TE85L,F) represents Toshiba Semiconductor and Storage's commitment to precision in pre-biased transistor technology. This BJT solution simplifies circuit prototyping with its internally set operating point, eliminating trim potentiometers in amplifier stages. Key attributes include low quiescent current for battery-powered devices, high noise immunity for RF applications, and symmetrical switching times for digital logic interfaces. Real-world implementations range from automotive lighting controls to renewable energy monitoring systems and building automation networks. Its gull-wing leads facilitate visual inspection during quality control processes. Elevate your design's reliability access technical resources and procurement options by inquiring about the RN2303(TE85L,F) today.

General specs

  • Product Status: Active
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 22 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70

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