Shopping cart

Subtotal: $0.00

STB22N60DM6

STMicroelectronics
STB22N60DM6 Preview
STMicroelectronics
MOSFET N-CH 600V 15A D2PAK
$2.16
Available to order
Reference Price (USD)
1+
$2.16422
500+
$2.1425778
1000+
$2.1209356
1500+
$2.0992934
2000+
$2.0776512
2500+
$2.056009
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

STMicroelectronics STB22N60DM6 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
STB22N60DM6

STB22N60DM6

$2.16

Product details

STMicroelectronics's STB22N60DM6 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The STB22N60DM6 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The STB22N60DM6 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Viewed products

Vishay Siliconix

SI5419DU-T1-GE3

$0.00 (not set)
Infineon Technologies

IPP100N04S303AKSA1

$0.00 (not set)
Nexperia USA Inc.

PMV75UP,215

$0.00 (not set)
Infineon Technologies

AUIRF3315S

$0.00 (not set)
Fairchild Semiconductor

ISL9N304AS3ST

$0.00 (not set)
Vishay Siliconix

IRF820PBF-BE3

$0.00 (not set)
Diodes Incorporated

BSS123-7-F

$0.00 (not set)
Nexperia USA Inc.

PSMN0R7-25YLDX

$0.00 (not set)
Taiwan Semiconductor Corporation

TSM60N600CH C5G

$0.00 (not set)
onsemi

NDD02N60Z-1G

$0.00 (not set)
Top