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SCH1301-TL-E

onsemi
SCH1301-TL-E Preview
onsemi
MOSFET P-CH 12V 2.4A 6SCH
$0.09
Available to order
Reference Price (USD)
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500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
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onsemi SCH1301-TL-E is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SCH1301-TL-E

SCH1301-TL-E

$0.09

Product details

Enhance your electronic designs with the SCH1301-TL-E single MOSFET transistor from onsemi, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The SCH1301-TL-E features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the SCH1301-TL-E particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the SCH1301-TL-E represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 1.3A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 6 V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: 6-SMD, Flat Leads

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