BC817-16QC-QZ
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
$0.05
Available to order
Reference Price (USD)
1+
$0.04622
500+
$0.0457578
1000+
$0.0452956
1500+
$0.0448334
2000+
$0.0443712
2500+
$0.043909
Exquisite packaging
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Nexperia USA Inc. BC817-16QC-QZ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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BC817-16QC-QZ
$0.05
Product details
The BC817-16QC-QZ by Nexperia USA Inc. sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The BC817-16QC-QZ commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. Nexperia USA Inc.'s commitment to innovation is evident in the BC817-16QC-QZ's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 380 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3
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