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JANSR2N2221AUBC/TR

Microchip Technology
JANSR2N2221AUBC/TR Preview
Microchip Technology
RH SMALL-SIGNAL BJT
$287.73
Available to order
Reference Price (USD)
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$287.73000
500+
$284.8527
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$281.9754
1500+
$279.0981
2000+
$276.2208
2500+
$273.3435
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Microchip Technology JANSR2N2221AUBC/TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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JANSR2N2221AUBC/TR

JANSR2N2221AUBC/TR

$287.73

Product details

Experience superior semiconductor performance with the JANSR2N2221AUBC/TR, a high-efficiency Bipolar Junction Transistor from Microchip Technology. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The JANSR2N2221AUBC/TR demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Microchip Technology produces the JANSR2N2221AUBC/TR using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the JANSR2N2221AUBC/TR stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UBC

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