2N3585P
Microchip Technology
Microchip Technology
POWER BJT
$38.16
Available to order
Reference Price (USD)
1+
$38.16000
500+
$37.7784
1000+
$37.3968
1500+
$37.0152
2000+
$36.6336
2500+
$36.252
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Microchip Technology 2N3585P is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2N3585P
$38.16
Product details
The 2N3585P from Microchip Technology is a high-performance Bipolar Junction Transistor (BJT) designed for reliable amplification and switching applications. As part of the Discrete Semiconductor Products category, this single BJT transistor delivers exceptional efficiency and durability. Its robust construction ensures stable operation under varying electrical conditions, making it a versatile choice for engineers and designers. Whether you're working on low-power circuits or high-frequency applications, the 2N3585P offers consistent performance with minimal distortion. The transistor's compact design allows for easy integration into various circuit layouts, saving valuable board space. With its excellent thermal stability and low noise characteristics, this BJT is ideal for precision electronic systems. Upgrade your projects with the 2N3585P and experience superior signal processing capabilities. For pricing and availability, submit an inquiry today to explore how this transistor can enhance your designs.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
- Power - Max: 2.5 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
Viewed products