SIDC30D60E6X1SA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 600V 75A WAFER
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Infineon Technologies SIDC30D60E6X1SA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIDC30D60E6X1SA1
$0.00
Product details
Optimize your power electronics with Infineon Technologies's SIDC30D60E6X1SA1 single rectifier diode, a high-efficiency solution for modern circuit designs. This diode features superior current handling capabilities combined with low power dissipation, making it ideal for energy-conscious applications. The SIDC30D60E6X1SA1 demonstrates excellent performance in voltage clamping, freewheeling, and reverse polarity protection circuits. Its advanced semiconductor design ensures reliable operation in switching power supplies, DC-DC converters, and battery management systems. The component's thermal characteristics allow for operation in high ambient temperature environments without performance degradation. Common industry applications include electric vehicle charging systems, industrial motor drives, and photovoltaic inverters. Additional advantages include consistent forward voltage characteristics and robust surge protection. Engineers will appreciate the diode's reliability in mission-critical power conversion tasks. For detailed technical information and volume pricing options, contact our sales team today.
General specs
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 75A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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