BSP52H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 80V 1A SOT223-4
$0.29
Available to order
Reference Price (USD)
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$0.29300
500+
$0.29007
1000+
$0.28714
1500+
$0.28421
2000+
$0.28128
2500+
$0.27835
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BSP52H6327XTSA1
$0.29
Product details
The BSP52H6327XTSA1 by Infineon Technologies is a top-tier Bipolar Junction Transistor (BJT) in the Transistors - Bipolar (BJT) - Single subcategory. This discrete semiconductor product excels in amplification and switching roles across various electronic circuits. With its superior current handling capacity and fast response times, the BSP52H6327XTSA1 ensures smooth operation in demanding environments. The transistor's low leakage current and high breakdown voltage contribute to its exceptional performance. Engineers appreciate its consistent characteristics batch after batch, enabling predictable circuit behavior. Typical applications include motor control systems, LED drivers, and RF modules. Medical devices, telecommunications equipment, and renewable energy systems also leverage this BJT's capabilities. The BSP52H6327XTSA1 is RoHS compliant and manufactured using advanced quality control processes. Its lead-free construction aligns with modern environmental standards. For professionals seeking reliable single BJT transistors, the BSP52H6327XTSA1 delivers outstanding value. Visit our website or submit an inquiry to learn more about purchasing options and volume discounts.
General specs
- Product Status: Not For New Designs
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.5 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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