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BCX70KE6327HTSA1

Infineon Technologies
BCX70KE6327HTSA1 Preview
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
$0.37
Available to order
Reference Price (USD)
3,000+
$0.04064
6,000+
$0.03572
15,000+
$0.03081
30,000+
$0.02917
75,000+
$0.02753
150,000+
$0.02480
Exquisite packaging
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Infineon Technologies BCX70KE6327HTSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BCX70KE6327HTSA1

BCX70KE6327HTSA1

$0.37

Product details

Experience superior semiconductor performance with the BCX70KE6327HTSA1, a high-efficiency Bipolar Junction Transistor from Infineon Technologies. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The BCX70KE6327HTSA1 demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Infineon Technologies produces the BCX70KE6327HTSA1 using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the BCX70KE6327HTSA1 stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Not For New Designs
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
  • Power - Max: 330 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23

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