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G3R160MT12D

GeneSiC Semiconductor
G3R160MT12D Preview
GeneSiC Semiconductor
SIC MOSFET N-CH 22A TO247-3
$6.91
Available to order
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GeneSiC Semiconductor G3R160MT12D is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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G3R160MT12D

G3R160MT12D

$6.91

Product details

Enhance your electronic designs with the G3R160MT12D single MOSFET transistor from GeneSiC Semiconductor, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The G3R160MT12D features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the G3R160MT12D particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the G3R160MT12D represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 123W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

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