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RFD16N05L

Harris Corporation
RFD16N05L Preview
Harris Corporation
N-CHANNEL POWER MOSFET
$1.08
Available to order
Reference Price (USD)
1+
$1.08000
500+
$1.0692
1000+
$1.0584
1500+
$1.0476
2000+
$1.0368
2500+
$1.026
Exquisite packaging
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RFD16N05L

RFD16N05L

$1.08

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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